Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSS806NL6327HTSA1
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RFQ
2,208
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Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel - 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
SI1413DH-T1-GE3
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RFQ
2,995
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1W (Ta) P-Channel - 20V 2.3A (Ta) 115 mOhm @ 2.9A, 4.5V 800mV @ 100µA 8.5nC @ 4.5V - 1.8V, 4.5V ±8V
SI1413DH-T1-E3
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RFQ
3,290
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.3A SC-70-6 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-TSSOP, SC-88, SOT-363 SC-70-6 (SOT-363) 1W (Ta) P-Channel - 20V 2.3A (Ta) 115 mOhm @ 2.9A, 4.5V 800mV @ 100µA 8.5nC @ 4.5V - 1.8V, 4.5V ±8V
NTLJF3117PTAG
RFQ
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RFQ
984
In-stock
ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V
SSM3J304T(TE85L,F)
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RFQ
2,871
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.3A TSM U-MOSIII Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 2.3A (Ta) 127 mOhm @ 1A, 4V - 6.1nC @ 4V 335pF @ 10V 1.8V, 4V ±8V
SSM3J304T(TE85L,F)
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RFQ
1,549
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.3A TSM U-MOSIII Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 2.3A (Ta) 127 mOhm @ 1A, 4V - 6.1nC @ 4V 335pF @ 10V 1.8V, 4V ±8V
SSM3J304T(TE85L,F)
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RFQ
1,596
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.3A TSM U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) P-Channel - 20V 2.3A (Ta) 127 mOhm @ 1A, 4V - 6.1nC @ 4V 335pF @ 10V 1.8V, 4V ±8V