Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NX3008NBKT,115
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1,816
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NXP USA Inc. MOSFET N-CH 30V SC-75 Automotive, AEC-Q101 Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-75, SOT-416 SC-75 250mW (Ta), 770mW (Tc) N-Channel - 30V 350mA (Ta) 1.4 Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68nC @ 4.5V 50pF @ 15V 1.8V, 4.5V ±8V
PMV28UNEAR
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2,352
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Nexperia USA Inc. MOSFET N-CH 20V TO-236AB Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB (SOT23) 510mW (Ta), 3.9W (Tc) N-Channel - 20V 4.7A (Ta) 32 mOhm @ 4.7A, 4.5V 1V @ 250µA 10nC @ 4.5V 490pF @ 10V 1.8V, 4.5V ±8V
RUC002N05HZGT116
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3,621
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Rohm Semiconductor 1.2V DRIVE NCH MOSFET Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SST3 350mW (Ta) N-Channel - 50V 200mA (Ta) - 1V @ 1mA - 25pF @ 10V 1.2V, 4.5V ±8V
DMN1008UFDF-13
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1,679
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Diodes Incorporated MOSFET N-CH30V SC-59 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type F) 700mW (Ta) N-Channel - 12V 12.2A (Ta) 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V 995pF @ 6V 2.5V, 4.5V ±8V