Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW25N60M2-EP
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1,633
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STMicroelectronics MOSFET N-CHANNEL 600V 18A TO247 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel - 600V 18A (Tc) 188 mOhm @ 9A, 10V 4.75V @ 250µA 29nC @ 10V 1090pF @ 100V 10V ±25V
STW24N60M2
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1,874
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STMicroelectronics MOSFET N-CH 600V 18A TO247 MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel - 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 10V ±25V
STW24N60DM2
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3,692
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STMicroelectronics MOSFET N-CH 600V 18A TO-247 FDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel - 600V 18A (Tc) 200 mOhm @ 9A, 10V 5V @ 250µA 29nC @ 10V 1055pF @ 100V 10V ±25V