Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQA33N10
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RFQ
647
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ON Semiconductor MOSFET N-CH 100V 36A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 163W (Tc) N-Channel - 100V 36A (Tc) 52 mOhm @ 18A, 10V 4V @ 250µA 51nC @ 10V 1500pF @ 25V 10V ±25V
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RFQ
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RFQ
739
In-stock
ON Semiconductor MOSFET N-CH 100V 25.8A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole SC-94 TO-3PF 83W (Tc) N-Channel - 100V 25.8A (Tc) 52 mOhm @ 12.9A, 10V 4V @ 250µA 51nC @ 10V 1500pF @ 25V 10V ±25V
FQPF33N10
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RFQ
1,148
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ON Semiconductor MOSFET N-CH 100V 18A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 41W (Tc) N-Channel - 100V 18A (Tc) 52 mOhm @ 9A, 10V 4V @ 250µA 51nC @ 10V 1500pF @ 25V 10V ±25V
FQP33N10
RFQ
VIEW
RFQ
3,374
In-stock
ON Semiconductor MOSFET N-CH 100V 33A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 127W (Tc) N-Channel - 100V 33A (Tc) 52 mOhm @ 16.5A, 10V 4V @ 250µA 51nC @ 10V 1500pF @ 25V 10V ±25V