Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP25N60M2-EP
RFQ
VIEW
RFQ
2,788
In-stock
STMicroelectronics MOSFET N-CH 600V 18A EP TO220AB MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 600V 18A (Tc) 188 mOhm @ 9A, 10V 4.75V @ 250µA 29nC @ 10V 1090pF @ 100V 10V ±25V
STP24N60DM2
RFQ
VIEW
RFQ
2,756
In-stock
STMicroelectronics MOSFET N-CH 600V 18A TO-220 FDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 600V 18A (Tc) 200 mOhm @ 9A, 10V 5V @ 250µA 29nC @ 10V 1055pF @ 100V 10V ±25V
STP24N60M2
RFQ
VIEW
RFQ
1,453
In-stock
STMicroelectronics MOSFET N-CH 600V 18A TO-220 MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 600V 18A (Tc) 190 mOhm @ 9A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 10V ±25V
STP11NM65N
RFQ
VIEW
RFQ
1,328
In-stock
STMicroelectronics MOSFET N-CH 650V 11A TO-220 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 650V 11A (Tc) 455 mOhm @ 5.5A, 10V 4V @ 250µA 29nC @ 10V 800pF @ 50V 10V ±25V
STP24N65M2
RFQ
VIEW
RFQ
3,534
In-stock
STMicroelectronics MOSFET N-CH 650V 16A TO-220AB MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 650V 16A (Tc) 230 mOhm @ 8A, 10V 4V @ 250µA 29nC @ 10V 1060pF @ 100V 10V ±25V