Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STW32NM50N
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3,352
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STMicroelectronics MOSFET N CH 500V 22A TO-247 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 500V 22A (Tc) 130 mOhm @ 11A, 10V 4V @ 250µA 62.5nC @ 10V 1973pF @ 50V 10V ±25V
STW62NM60N
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RFQ
1,476
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STMicroelectronics MOSFET N-CH 600V 65A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 450W (Tc) N-Channel - 600V 65A (Tc) 49 mOhm @ 32.5A, 10V 4V @ 250µA 174nC @ 10V 5800pF @ 100V 10V ±25V
STW48NM60N
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RFQ
663
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STMicroelectronics MOSFET N-CH 600V 39A TO-247 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 330W (Tc) N-Channel - 600V 44A (Tc) 70 mOhm @ 20A, 10V 4V @ 250µA 124nC @ 10V 4285pF @ 50V 10V ±25V
STW56NM60N
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RFQ
2,493
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STMicroelectronics MOSFET N CH 600V 45A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 300W (Tc) N-Channel - 600V 45A (Tc) 60 mOhm @ 22.5A, 10V 4V @ 250µA 150nC @ 10V 4800pF @ 50V 10V ±25V
STW60NM50N
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RFQ
3,270
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STMicroelectronics MOSFET N CH 500V 68A TO-247 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 446W (Tc) N-Channel - 500V 68A (Tc) 43 mOhm @ 34A, 10V 4V @ 250µA 178nC @ 10V 5790pF @ 100V 10V ±25V