Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQI17P06TU
RFQ
VIEW
RFQ
2,546
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ON Semiconductor MOSFET P-CH 60V 17A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.75W (Ta), 79W (Tc) P-Channel - 60V 17A (Tc) 120 mOhm @ 8.5A, 10V 4V @ 250µA 27nC @ 10V 900pF @ 25V 10V ±25V
FQP17P06
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RFQ
2,319
In-stock
ON Semiconductor MOSFET P-CH 60V 17A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 79W (Tc) P-Channel - 60V 17A (Tc) 120 mOhm @ 8.5A, 10V 4V @ 250µA 27nC @ 10V 900pF @ 25V 10V ±25V