Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STP9NM40N
RFQ
VIEW
RFQ
1,483
In-stock
STMicroelectronics MOSFET N-CH 400V 5.6A TO220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) N-Channel - 400V 5.6A (Tc) 790 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 365pF @ 50V 10V ±25V
STF8NM50N
RFQ
VIEW
RFQ
3,746
In-stock
STMicroelectronics MOSFET N-CH 500V 5A TO-220FP MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 500V 5A (Tc) 790 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 364pF @ 50V 10V ±25V
STU8NM50N
RFQ
VIEW
RFQ
917
In-stock
STMicroelectronics MOSFET N-CH 500V 5A IPAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 500V 5A (Tc) 790 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 364pF @ 50V 10V ±25V
STP8NM50N
RFQ
VIEW
RFQ
3,815
In-stock
STMicroelectronics MOSFET N-CH 500V 5A TO-220AB MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 45W (Tc) N-Channel - 500V 5A (Tc) 790 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 364pF @ 50V 10V ±25V