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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	STP31N65M5	RFQ VIEW	PDF RFQ	1,877 In-stock	STMicroelectronics	MOSFET N-CH 650V 22A TO-220		MDmesh™ V	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	150W (Tc)	N-Channel	-	650V	22A (Tc)	148 mOhm @ 11A, 10V	5V @ 250µA	45nC @ 10V	816pF @ 100V	10V	±25V
	STW31N65M5	RFQ VIEW	PDF RFQ	2,709 In-stock	STMicroelectronics	MOSFET N-CH 650V 22A TO-247		MDmesh™ V	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	150W (Tc)	N-Channel	-	650V	22A (Tc)	148 mOhm @ 11A, 10V	5V @ 250µA	45nC @ 10V	816pF @ 100V	10V	±25V
	STF31N65M5	RFQ VIEW	PDF RFQ	2,300 In-stock	STMicroelectronics	MOSFET N-CH 650V 22A TO-220FP		MDmesh™ V	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP	30W (Tc)	N-Channel	-	650V	22A (Tc)	148 mOhm @ 11A, 10V	5V @ 250µA	45nC @ 10V	816pF @ 100V	10V	±25V
	STFI31N65M5	RFQ VIEW	PDF RFQ	1,964 In-stock	STMicroelectronics	MOSFET N CH 650V 22A I2PAKFP		MDmesh™ V	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Full Pack, I²Pak	I2PAKFP (TO-281)	30W (Tc)	N-Channel	-	650V	22A (Tc)	148 mOhm @ 11A, 10V	5V @ 250µA	45nC @ 10V	1865pF @ 100V	10V	±25V

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