Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP16N60M2
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3,557
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STMicroelectronics MOSFET N-CH 600V 12A TO-220AB MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 600V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 19nC @ 10V 700pF @ 100V 10V ±25V
STF16N60M2
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3,539
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STMicroelectronics MOSFET N-CH 600V 12A TO-220FP MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel - 600V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 19nC @ 10V 700pF @ 100V 10V ±25V
STU16N60M2
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1,856
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STMicroelectronics MOSFET N-CH 600V 12A IPAK MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 600V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 19nC @ 10V 700pF @ 100V 10V ±25V