Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC240N12NS3 G
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1,398
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Infineon Technologies MOSFET N-CH 120V 37A 8TDSON OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 66W (Tc) N-Channel - 120V 37A (Tc) 24 mOhm @ 31A, 10V 4V @ 35µA 27nC @ 10V 1900pF @ 60V 10V ±20V
SIR873DP-T1-GE3
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873
In-stock
Vishay Siliconix MOSFET P-CH 150V 37A POWERPAKSO TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 104W (Tc) P-Channel - 150V 37A (Tc) 47.5 mOhm @ 10A, 10V 4V @ 250µA 48nC @ 10V 1805pF @ 75V 10V ±20V
BSZ240N12NS3GATMA1
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RFQ
666
In-stock
Infineon Technologies MOSFET N-CH 120V 37A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 66W (Tc) N-Channel - 120V 37A (Tc) 24 mOhm @ 20A, 10V 4V @ 35µA 27nC @ 10V 1900pF @ 60V 10V ±20V
SIR606DP-T1-GE3
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1,110
In-stock
Vishay Siliconix MOSFET N-CH 100V 37A POWERPAKSO TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 44.5W (Tc) N-Channel - 100V 37A (Tc) 16.2 mOhm @ 15A, 10V 3.6V @ 250µA 22nC @ 6V 1360pF @ 50V 6V, 10V ±20V
IPB60R080P7ATMA1
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RFQ
3,601
In-stock
Infineon Technologies MOSFET N-CH TO263-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 129W (Tc) N-Channel - 650V 37A (Tc) 80 mOhm @ 11.8A, 10V 4V @ 590µA 51nC @ 10V 2180pF @ 400V 10V ±20V