Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,946
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IXYS MOSFET N-CH 1000V 22A I4-PAC HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ - N-Channel - 1000V 22A (Tc) 390 mOhm @ 15A, 10V 5V @ 8mA 250nC @ 10V - 10V ±20V
IXKN40N60C
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858
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IXYS MOSFET N-CH 600V 40A SOT-227B CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 290W (Tc) N-Channel Super Junction 600V 40A (Tc) 70 mOhm @ 500mA, 10V 3.9V @ 2.5mA 250nC @ 10V - 10V ±20V
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3,846
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IXYS MOSFET N-CH 75V 160A ISOPLUS220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 300W (Tc) N-Channel - 75V 160A (Tc) 6.5 mOhm @ 100A, 10V 4V @ 2mA 250nC @ 10V - 10V ±20V
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3,211
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IXYS MOSFET N-CH 600V 38A I4-PAC-5 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 ISOPLUS i4-PAC™ - N-Channel Super Junction 600V 38A (Tc) 70 mOhm @ 20A, 10V 3.9V @ 2.7mA 250nC @ 10V - 10V ±20V
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3,608
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IXYS MOSFET N-CH 600V 38A I4-PAC-5 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole i4-Pac™-5 (3 Leads) ISOPLUS i4-PAC™ - N-Channel Super Junction 600V 41A (Tc) 70 mOhm @ 25A, 10V 3.9V @ 3mA 250nC @ 10V - 10V ±20V
IXKR40N60C
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781
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IXYS MOSFET N-CH 600V 38A ISOPLUS247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ - N-Channel Super Junction 600V 38A (Tc) 70 mOhm @ 25A, 10V 3.9V @ 3mA 250nC @ 10V - 10V ±20V