Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7807VPBF
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2,571
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 3V @ 250µA 14nC @ 5V - 4.5V ±20V
IRF7807VD2PBF
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RFQ
2,204
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V
IRF7807VD1PBF
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RFQ
3,011
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 3V @ 250µA 14nC @ 4.5V - 4.5V ±20V
IRLR7833CPBF
RFQ
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RFQ
3,987
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Infineon Technologies MOSFET N-CH 30V 140A DPAK - Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 140W (Tc) N-Channel - 30V 140A (Ta) - - - - 4.5V, 10V ±20V
IRLR8103
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RFQ
826
In-stock
Infineon Technologies MOSFET N-CH 30V 89A D-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 89W (Ta) N-Channel - 30V 89A (Ta) 7 mOhm @ 15A, 10V 2V @ 250µA (Min) 50nC @ 5V - 4.5V, 10V ±20V
IRF7807VD1
RFQ
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RFQ
1,641
In-stock
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 3V @ 250µA 14nC @ 4.5V - 4.5V ±20V
IRF7807VD2
RFQ
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RFQ
2,578
In-stock
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V