- Manufacture :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,759
In-stock
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IXYS | MOSFET N-CH 800V 44A SOT-227B | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | 380W (Tc) | N-Channel | Super Junction | 800V | 44A (Tc) | 74 mOhm @ 44A, 10V | 3.9V @ 4mA | 360nC @ 10V | - | 10V | ±20V | |||
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VIEW |
1,074
In-stock
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IXYS | MOSFET N-CH 800V 25A ISO264 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISO264™ | ISO264™ | 250W (Tc) | N-Channel | - | 800V | 25A (Tc) | 150 mOhm @ 9A, 10V | 4V @ 2mA | 166nC @ 10V | - | 10V | ±20V | |||
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VIEW |
1,955
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4A IPAK-SL | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 32W (Tc) | N-Channel | Super Junction | 800V | 4A (Tc) | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | - | 10V | ±20V |