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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,486
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 58A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 60V | 58A (Tc) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 10V | ±20V | |||
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VIEW |
2,779
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 58A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | 60V | 58A (Ta) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 10V | ±20V | |||
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VIEW |
3,213
In-stock
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Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 107W (Tc) | N-Channel | 60V | 90A (Tc) | 3.3 mOhm @ 90A, 10V | 3.3V @ 50µA | 44nC @ 10V | 3400pF @ 30V | 6V, 10V | ±20V |