Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK58A06N1,S4X
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 58A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel 60V 58A (Tc) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 10V ±20V
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Toshiba Semiconductor and Storage MOSFET N CH 60V 58A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel 60V 58A (Ta) 5.4 mOhm @ 29A, 10V 4V @ 500µA 46nC @ 10V 3400pF @ 30V 10V ±20V
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Infineon Technologies MOSFET N-CH 60V 90A TO252-3 OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 107W (Tc) N-Channel 60V 90A (Tc) 3.3 mOhm @ 90A, 10V 3.3V @ 50µA 44nC @ 10V 3400pF @ 30V 6V, 10V ±20V