Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPI08CNE8N G
RFQ
VIEW
RFQ
3,147
In-stock
Infineon Technologies MOSFET N-CH 85V 95A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 167W (Tc) N-Channel - 85V 95A (Tc) 6.4 mOhm @ 95A, 10V 4V @ 130µA 99nC @ 10V 6690pF @ 40V 10V ±20V
IPB08CNE8N G
RFQ
VIEW
RFQ
2,240
In-stock
Infineon Technologies MOSFET N-CH 85V 95A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 167W (Tc) N-Channel - 85V 95A (Tc) 8.2 mOhm @ 95A, 10V 4V @ 130µA 99nC @ 10V 6690pF @ 40V 10V ±20V
IPP08CNE8N G
RFQ
VIEW
RFQ
3,284
In-stock
Infineon Technologies MOSFET N-CH 85V 95A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 167W (Tc) N-Channel - 85V 95A (Tc) 6.4 mOhm @ 95A, 10V 4V @ 130µA 99nC @ 10V 6690pF @ 40V 10V ±20V
AUIRFR8403
RFQ
VIEW
RFQ
3,630
In-stock
Infineon Technologies MOSFET N-CH 40V 100A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 99W (Tc) N-Channel - 40V 100A (Tc) 3.1 mOhm @ 76A, 10V 3.9V @ 100µA 99nC @ 10V 3171pF @ 25V 10V ±20V
FDP030N06B-F102
RFQ
VIEW
RFQ
2,963
In-stock
ON Semiconductor MOSFET N-CH 60V 120A TO-220-3 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 205W (Tc) N-Channel - 60V 120A (Tc) 3.1 mOhm @ 100A, 10V 4V @ 250µA 99nC @ 10V 8030pF @ 30V 10V ±20V
STP80N70F6
RFQ
VIEW
RFQ
3,251
In-stock
STMicroelectronics MOSFET N CH 68V 96A TO-220 DeepGATE™, STripFET™ VI Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 68V 96A (Tc) 8 mOhm @ 48A, 10V 4V @ 250µA 99nC @ 10V 5850pF @ 25V 10V ±20V
AUIRFU8403
RFQ
VIEW
RFQ
3,126
In-stock
Infineon Technologies MOSFET N-CH 40V 100A IPAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 99W (Tc) N-Channel - 40V 100A (Tc) 3.1 mOhm @ 76A, 10V 3.9V @ 100µA 99nC @ 10V 3171pF @ 25V 10V ±20V
AUIRFR8403TRL
RFQ
VIEW
RFQ
2,145
In-stock
Infineon Technologies MOSFET N-CH 40V 100A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 99W (Tc) N-Channel - 40V 100A (Tc) 3.1 mOhm @ 76A, 10V 3.9V @ 100µA 99nC @ 10V 3171pF @ 25V 10V ±20V
TPH1R005PL,L1Q
RFQ
VIEW
RFQ
1,302
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 45V 150A U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 170W (Tc) N-Channel - 45V 150A (Tc) 1.04 mOhm @ 50A, 10V 2.4V @ 1mA 99nC @ 10V 9600pF @ 22.5V 4.5V, 10V ±20V
TPH1R005PL,L1Q
RFQ
VIEW
RFQ
2,021
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 45V 150A U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 170W (Tc) N-Channel - 45V 150A (Tc) 1.04 mOhm @ 50A, 10V 2.4V @ 1mA 99nC @ 10V 9600pF @ 22.5V 4.5V, 10V ±20V
TPH1R005PL,L1Q
RFQ
VIEW
RFQ
782
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 45V 150A U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 960mW (Ta), 170W (Tc) N-Channel - 45V 150A (Tc) 1.04 mOhm @ 50A, 10V 2.4V @ 1mA 99nC @ 10V 9600pF @ 22.5V 4.5V, 10V ±20V