- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,147
In-stock
|
Infineon Technologies | MOSFET N-CH 85V 95A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 6.4 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | |||
|
VIEW |
2,240
In-stock
|
Infineon Technologies | MOSFET N-CH 85V 95A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 8.2 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | |||
|
VIEW |
3,284
In-stock
|
Infineon Technologies | MOSFET N-CH 85V 95A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 167W (Tc) | N-Channel | - | 85V | 95A (Tc) | 6.4 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | 6690pF @ 40V | 10V | ±20V | |||
|
VIEW |
3,630
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,963
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 120A TO-220-3 | PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 205W (Tc) | N-Channel | - | 60V | 120A (Tc) | 3.1 mOhm @ 100A, 10V | 4V @ 250µA | 99nC @ 10V | 8030pF @ 30V | 10V | ±20V | |||
|
VIEW |
3,251
In-stock
|
STMicroelectronics | MOSFET N CH 68V 96A TO-220 | DeepGATE™, STripFET™ VI | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 68V | 96A (Tc) | 8 mOhm @ 48A, 10V | 4V @ 250µA | 99nC @ 10V | 5850pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,126
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,145
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 99W (Tc) | N-Channel | - | 40V | 100A (Tc) | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | 3171pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,302
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 45V 150A | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 45V | 150A (Tc) | 1.04 mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,021
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 45V 150A | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 45V | 150A (Tc) | 1.04 mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | 4.5V, 10V | ±20V | |||
|
VIEW |
782
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 45V 150A | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 960mW (Ta), 170W (Tc) | N-Channel | - | 45V | 150A (Tc) | 1.04 mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | 9600pF @ 22.5V | 4.5V, 10V | ±20V |