- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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20 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,555
In-stock
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Infineon Technologies | MOSFET N-CH 100V 13A TO251-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
1,763
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 13A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 80 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
968
In-stock
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Infineon Technologies | MOSFET N-CH 100V 13A TO263-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 79 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
3,302
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 13A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 80 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
2,832
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.4W (Ta), 4.8W (Tc) | N-Channel | - | 100V | 3.8A (Tc) | 158 mOhm @ 2.7A, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
1,193
In-stock
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Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
2,218
In-stock
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Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
3,736
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
1,294
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
2,004
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
3,945
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 13A TO252-3 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 31W (Tc) | N-Channel | - | 100V | 13A (Tc) | 78 mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 716pF @ 50V | 10V | ±20V | ||||
VIEW |
2,326
In-stock
|
ON Semiconductor | MOSFET N-CH 100V POWER56 | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 48W (Tc) | N-Channel | - | 100V | 6A (Ta), 26A (Tc) | 34 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 645pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
3,809
In-stock
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ON Semiconductor | MOSFET N-CH 100V POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 48W (Tc) | N-Channel | - | 100V | 6A (Ta), 26A (Tc) | 34 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 645pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
2,244
In-stock
|
ON Semiconductor | MOSFET N-CH 100V POWER56 | PowerTrench® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 48W (Tc) | N-Channel | - | 100V | 6A (Ta), 26A (Tc) | 34 mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | 645pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
2,066
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.4W (Ta), 4.8W (Tc) | N-Channel | - | 100V | 3.8A (Tc) | 158 mOhm @ 2.7A, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
3,479
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.4W (Ta), 4.8W (Tc) | N-Channel | - | 100V | 3.8A (Tc) | 158 mOhm @ 2.7A, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
1,642
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.4W (Ta), 4.8W (Tc) | N-Channel | - | 100V | 3.8A (Tc) | 158 mOhm @ 2.7A, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
2,511
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V | ||||
VIEW |
3,337
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V | ||||
VIEW |
3,391
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V |