Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK32E12N1,S1X
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Toshiba Semiconductor and Storage MOSFET N CH 120V 60A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 98W (Tc) N-Channel - 120V 60A (Tc) 13.8 mOhm @ 16A, 10V 4V @ 500µA 34nC @ 10V 2000pF @ 60V 10V ±20V
IPD60N10S412ATMA1
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3,856
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Infineon Technologies MOSFET N-CH TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 94W (Tc) N-Channel - 100V 60A (Tc) 12.2 mOhm @ 60A, 10V 3.5V @ 46µA 34nC @ 10V 2470pF @ 25V 10V ±20V