- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,934
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 11A TP | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 1W (Ta), 35W (Tc) | P-Channel | - | 100V | 11A (Ta) | 275 mOhm @ 5.5A, 10V | - | 21nC @ 10V | 1020pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
3,183
In-stock
|
Infineon Technologies | MOSFET P-CH 60V 9.7A TO-251 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 42W (Tc) | P-Channel | - | 60V | 9.7A (Tc) | 250 mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | 450pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,169
In-stock
|
STMicroelectronics | MOSFET P-CH 60V 10A IPAK | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 40W (Tc) | P-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 5A, 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | 10V | ±20V | |||
