Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTD5865N-1G
RFQ
VIEW
RFQ
3,655
In-stock
ON Semiconductor MOSFET N-CH 60V 43A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 71W (Tc) N-Channel - 60V 43A (Tc) 18 mOhm @ 20A, 10V 4V @ 250µA 23nC @ 10V 1261pF @ 25V 10V ±20V
IXTT1N100
RFQ
VIEW
RFQ
2,714
In-stock
IXYS MOSFET N-CH 1000V 1.5A TO-268 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 60W (Tc) N-Channel - 1000V 1.5A (Tc) 11 Ohm @ 1A, 10V 4.5V @ 25µA 23nC @ 10V 480pF @ 25V 10V ±20V
IRFR2605
RFQ
VIEW
RFQ
893
In-stock
Infineon Technologies MOSFET N-CH 55V 19A D-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 50W (Tc) N-Channel - 55V 19A (Tc) 85 mOhm @ 11A, 10V 4V @ 250µA 23nC @ 10V 420pF @ 25V 10V ±20V
IRFR220NCPBF
RFQ
VIEW
RFQ
1,272
In-stock
Infineon Technologies MOSFET N-CH 200V 5A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 43W (Tc) N-Channel - 200V 5A (Ta) 600 mOhm @ 2.9A, 10V 4V @ 250µA 23nC @ 10V 300pF @ 25V 10V ±20V