Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP065N03LGXKSA1
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2,508
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Infineon Technologies MOSFET N-CH 30V 50A TO-220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 56W (Tc) N-Channel - 30V 50A (Tc) 6.5 mOhm @ 30A, 10V 2.2V @ 250µA 23nC @ 10V 2400pF @ 15V 4.5V, 10V ±20V
IPU060N03L G
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776
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Infineon Technologies MOSFET N-CH 30V 50A TO-251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 56W (Tc) N-Channel - 30V 50A (Tc) 6 mOhm @ 30A, 10V 2.2V @ 250µA 23nC @ 10V 2400pF @ 15V 4.5V, 10V ±20V
IPS060N03LGAKMA1
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3,913
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Infineon Technologies MOSFET N-CH 30V 50A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PG-TO251-3 56W (Tc) N-Channel - 30V 50A (Tc) 6 mOhm @ 30A, 10V 2.2V @ 250µA 23nC @ 10V 2400pF @ 15V 4.5V, 10V ±20V