- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,258
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 50V 25A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 30W (Tc) | N-Channel | 50V | 25A (Ta) | 46 mOhm @ 12A, 10V | 2V @ 1mA | 25nC @ 10V | 900pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
2,951
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 100V 12A TO220NIS | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 35W (Tc) | P-Channel | 100V | 12A (Ta) | 210 mOhm @ 6A, 10V | 2V @ 1mA | 48nC @ 10V | 1100pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
3,435
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 14A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 40W (Tc) | P-Channel | 60V | 14A (Ta) | 120 mOhm @ 7A, 10V | 2V @ 1mA | 45nC @ 10V | 1200pF @ 10V | 4V, 10V | ±20V | |||
