- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,605
In-stock
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Renesas Electronics America | MOSFET N-CH 40V 40A LFPAK | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 40V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | - | 25nC @ 10V | 2000pF @ 10V | 10V | ±20V | |||
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VIEW |
3,867
In-stock
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Renesas Electronics America | MOSFET N-CH 40V 40A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 40V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | - | 25nC @ 10V | 2000pF @ 10V | 10V | ±20V | |||
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VIEW |
3,444
In-stock
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Renesas Electronics America | MOSFET N-CH 40V 40A LFPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 40V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | - | 25nC @ 10V | 2000pF @ 10V | 10V | ±20V | |||
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VIEW |
1,159
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 40A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | - | N-Channel | - | 30V | 40A (Ta) | 4.9 mOhm @ 20A, 10V | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,573
In-stock
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
3,524
In-stock
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
3,154
In-stock
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Infineon Technologies | MOSFET N CH 30V 21A PQFN5X6 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.4W (Ta), 54W (Tc) | N-Channel | - | 30V | 21A (Ta), 83A (Tc) | 4.9 mOhm @ 20A, 10V | 2V @ 50µA | 59nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
