Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSP123L6327HTSA1
RFQ
VIEW
RFQ
3,488
In-stock
Infineon Technologies MOSFET N-CH 100V 370MA SOT-223 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel 100V 370mA (Ta) 6 Ohm @ 370mA, 10V 1.8V @ 50µA 2.4nC @ 10V 70pF @ 25V 2.8V, 10V ±20V
BSP123L6327HTSA1
RFQ
VIEW
RFQ
2,150
In-stock
Infineon Technologies MOSFET N-CH 100V 370MA SOT223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel 100V 370mA (Ta) 6 Ohm @ 370mA, 10V 1.8V @ 50µA 2.4nC @ 10V 70pF @ 25V 2.8V, 10V ±20V
BSP123L6327HTSA1
RFQ
VIEW
RFQ
1,663
In-stock
Infineon Technologies MOSFET N-CH 100V 370MA SOT223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel 100V 370mA (Ta) 6 Ohm @ 370mA, 10V 1.8V @ 50µA 2.4nC @ 10V 70pF @ 25V 2.8V, 10V ±20V
BSP123E6327T
RFQ
VIEW
RFQ
3,842
In-stock
Infineon Technologies MOSFET N-CH 100V 370MA SOT223 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel 100V 370mA (Ta) 6 Ohm @ 370mA, 10V 1.8V @ 50µA 2.4nC @ 10V 70pF @ 25V 2.8V, 10V ±20V
BSP123E6327T
RFQ
VIEW
RFQ
1,890
In-stock
Infineon Technologies MOSFET N-CH 100V 370MA SOT223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.79W (Ta) N-Channel 100V 370mA (Ta) 6 Ohm @ 370mA, 10V 1.8V @ 50µA 2.4nC @ 10V 70pF @ 25V 2.8V, 10V ±20V
6HP04MH-TL-W
RFQ
VIEW
RFQ
3,080
In-stock
ON Semiconductor MOSFET P-CH 60V .37A - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads SC-70FL/MCPH3 600mW (Ta) P-Channel 60V 370mA (Ta) 4.2 Ohm @ 190mA, 10V - 0.84nC @ 10V 24.1pF @ 20V 4V, 10V ±20V
6HP04MH-TL-W
RFQ
VIEW
RFQ
1,724
In-stock
ON Semiconductor MOSFET P-CH 60V .37A - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads SC-70FL/MCPH3 600mW (Ta) P-Channel 60V 370mA (Ta) 4.2 Ohm @ 190mA, 10V - 0.84nC @ 10V 24.1pF @ 20V 4V, 10V ±20V
6HP04MH-TL-W
RFQ
VIEW
RFQ
1,216
In-stock
ON Semiconductor MOSFET P-CH 60V .37A - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads SC-70FL/MCPH3 600mW (Ta) P-Channel 60V 370mA (Ta) 4.2 Ohm @ 190mA, 10V - 0.84nC @ 10V 24.1pF @ 20V 4V, 10V ±20V
IRFD420
RFQ
VIEW
RFQ
3,991
In-stock
Vishay Siliconix MOSFET N-CH 500V 370MA 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 500V 370mA (Ta) 3 Ohm @ 220mA, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V
6HP04CH-TL-W
RFQ
VIEW
RFQ
3,531
In-stock
ON Semiconductor MOSFET P-CH 60V 0.37A SB69 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 3-CPH - P-Channel 60V 370mA (Ta) 4.2 Ohm @ 190mA, 10V - 0.84nC @ 10V 24.1pF @ 20V 4V, 10V ±20V
6HP04CH-TL-W
RFQ
VIEW
RFQ
2,519
In-stock
ON Semiconductor MOSFET P-CH 60V 0.37A SB69 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 3-CPH - P-Channel 60V 370mA (Ta) 4.2 Ohm @ 190mA, 10V - 0.84nC @ 10V 24.1pF @ 20V 4V, 10V ±20V
6HP04CH-TL-W
RFQ
VIEW
RFQ
2,714
In-stock
ON Semiconductor MOSFET P-CH 60V 0.37A SB69 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 3-CPH - P-Channel 60V 370mA (Ta) 4.2 Ohm @ 190mA, 10V - 0.84nC @ 10V 24.1pF @ 20V 4V, 10V ±20V
IRFD420PBF
RFQ
VIEW
RFQ
1,317
In-stock
Vishay Siliconix MOSFET N-CH 500V 370MA 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 500V 370mA (Ta) 3 Ohm @ 220mA, 10V 4V @ 250µA 24nC @ 10V 360pF @ 25V 10V ±20V