Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTT10N100D2
RFQ
VIEW
RFQ
3,106
In-stock
IXYS MOSFET N-CH 1000V 10A TO-267 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 695W (Tc) N-Channel Depletion Mode 1000V 10A (Tc) 1.5 Ohm @ 5A, 10V - 200nC @ 5V 5320pF @ 25V 10V ±20V
IXTT10P60
RFQ
VIEW
RFQ
3,542
In-stock
IXYS MOSFET P-CH 600V 10A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) P-Channel - 600V 10A (Tc) 1 Ohm @ 5A, 10V 5V @ 250µA 160nC @ 10V 4700pF @ 25V 10V ±20V
IXTT10P50
RFQ
VIEW
RFQ
1,942
In-stock
IXYS MOSFET P-CH 500V 10A TO-268 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) P-Channel - 500V 10A (Tc) 900 mOhm @ 5A, 10V 5V @ 250µA 160nC @ 10V 4700pF @ 25V 10V ±20V
IXFT10N100
RFQ
VIEW
RFQ
1,553
In-stock
IXYS MOSFET N-CH 1000V 10A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel - 1000V 10A (Tc) 1.2 Ohm @ 5A, 10V 4.5V @ 4mA 155nC @ 10V 4000pF @ 25V 10V ±20V