Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFK21N100Q
RFQ
VIEW
RFQ
2,651
In-stock
IXYS MOSFET N-CH 1000V 21A TO-264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 170nC @ 10V 6900pF @ 25V 10V ±20V
IXFX21N100Q
RFQ
VIEW
RFQ
3,219
In-stock
IXYS MOSFET N-CH 1000V 21A PLUS 247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 170nC @ 10V 6900pF @ 25V 10V ±20V
IXFK21N100F
RFQ
VIEW
RFQ
2,311
In-stock
IXYS-RF MOSFET N-CH 1000V 21A TO264 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXFK) 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 160nC @ 10V 5500pF @ 25V 10V ±20V
IXFX21N100F
RFQ
VIEW
RFQ
2,382
In-stock
IXYS-RF MOSFET N-CH 1000V 21A PLUS247-3 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 500W (Tc) N-Channel - 1000V 21A (Tc) 500 mOhm @ 10.5A, 10V 5.5V @ 4mA 160nC @ 10V 5500pF @ 25V 10V ±20V
IXFH21N50F
RFQ
VIEW
RFQ
2,525
In-stock
IXYS-RF MOSFET N-CH 500V 21A TO247 HiPerRF™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 300W (Tc) N-Channel - 500V 21A (Tc) 250 mOhm @ 10.5A, 10V 5.5V @ 4mA 77nC @ 10V 2600pF @ 25V 10V ±20V