- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
16 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,430
In-stock
|
Infineon Technologies | MOSFET N-CH 550V 23A TO262-3 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,576
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 21A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 192W (Tc) | N-Channel | - | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,975
In-stock
|
Infineon Technologies | MOSFET N-CH 500V 23A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
972
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 21A D2PAK | CoolMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,262
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 21A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,144
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 21A D2PAK | CoolMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,176
In-stock
|
Infineon Technologies | MOSFET N-CH 550V 23A TO-263 | CoolMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,985
In-stock
|
Infineon Technologies | MOSFET N-CH 550V 23A TO-263 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
1,183
In-stock
|
Infineon Technologies | MOSFET N-CH 550V 23A TO-263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,915
In-stock
|
Texas Instruments | MOSFET N-CH 60V 100A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 192W (Tc) | N-Channel | - | 60V | 72A (Ta), 100A (Tc) | 6.3 mOhm @ 75A, 10V | 2.3V @ 250µA | 34nC @ 10V | 3025pF @ 30V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,411
In-stock
|
Infineon Technologies | MOSFET N-CH 550V 23A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,294
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 21A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 192W (Tc) | N-Channel | - | 650V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,298
In-stock
|
Infineon Technologies | MOSFET N-CH 550V 23A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 192W (Tc) | N-Channel | - | 550V | 23A (Tc) | 140 mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | 2540pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,519
In-stock
|
Infineon Technologies | MOSFET N-CH 600V 21A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 192W (Tc) | N-Channel | - | 600V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
|
VIEW |
2,027
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 148A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 100V | 148A (Ta) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
|
VIEW |
872
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 80V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 80V | 72A (Ta) | 4.3 mOhm @ 36A, 10V | 4V @ 1mA | 81nC @ 10V | 5500pF @ 40V | 10V | ±20V |