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- Power Dissipation (Max) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,407
In-stock
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Infineon Technologies | MOSFET N-CH 600V 11A TO-263 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 125W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
1,142
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
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VIEW |
1,263
In-stock
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 11A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 124W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 11A (Tc) | 390 mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
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VIEW |
1,726
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,551
In-stock
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Infineon Technologies | MOSFET N-CH 600V 11A TO-263 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 96W (Tc) | N-Channel | - | 600V | 11A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,143
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 11A LPT | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 11A (Tc) | 390 mOhm @ 3.8A, 10V | 4V @ 1mA | 32nC @ 10V | 670pF @ 25V | 10V | ±20V | |||
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VIEW |
1,648
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 11A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,964
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 11A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
