Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF720L
RFQ
VIEW
RFQ
607
In-stock
Vishay Siliconix MOSFET N-CH 400V 3.3A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.1W (Ta), 50W (Tc) N-Channel 400V 3.3A (Tc) 1.8 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 10V ±20V
IRF720S
RFQ
VIEW
RFQ
2,410
In-stock
Vishay Siliconix MOSFET N-CH 400V 3.3A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 50W (Tc) N-Channel 400V 3.3A (Tc) 1.8 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 10V ±20V
IRF720
RFQ
VIEW
RFQ
1,783
In-stock
Vishay Siliconix MOSFET N-CH 400V 3.3A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 50W (Tc) N-Channel 400V 3.3A (Tc) 1.8 Ohm @ 2A, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 10V ±20V
IRFI720G
RFQ
VIEW
RFQ
715
In-stock
Vishay Siliconix MOSFET N-CH 400V 2.6A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 400V 2.6A (Tc) 1.8 Ohm @ 1.6A, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 10V ±20V
IRFD320
RFQ
VIEW
RFQ
3,757
In-stock
Vishay Siliconix MOSFET N-CH 400V 490MA 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 400V 490mA (Ta) 1.8 Ohm @ 210mA, 10V 4V @ 250µA 20nC @ 10V 410pF @ 25V 10V ±20V