Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPD50N04S309ATMA1
RFQ
VIEW
RFQ
3,042
In-stock
Infineon Technologies MOSFET N-CH 40V 50A TO252-3 OptiMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 63W (Tc) N-Channel - 40V 50A (Tc) 9 mOhm @ 50A, 10V 4V @ 28µA 26nC @ 10V 1750pF @ 25V 10V ±20V
IRFR4615PBF
RFQ
VIEW
RFQ
3,401
In-stock
Infineon Technologies MOSFET N-CH 150V 33A D-PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 144W (Tc) N-Channel - 150V 33A (Tc) 42 mOhm @ 21A, 10V 5V @ 100µA 26nC @ 10V 1750pF @ 50V 10V ±20V