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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,318
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Automotive, AEC-Q101, CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1110pF @ 100V | 10V | ±20V | |||
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VIEW |
1,164
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,230
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
1,628
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V |