Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,395
In-stock
ON Semiconductor MOSFET N-CHANNEL 60V 30A 8PQFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 50W (Tj) N-Channel 60V 30A (Tc) 15 mOhm @ 30A, 10V 4V @ 250µA 19nC @ 10V 881pF @ 30V 10V ±20V
TSM061NA03CR RLG
RFQ
VIEW
RFQ
1,014
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 88A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 78W (Tc) N-Channel 30V 88A (Tc) 6.1 mOhm @ 16A, 10V 2.5V @ 250µA 19nC @ 10V 1133pF @ 15V 4.5V, 10V ±20V
TSM045NA03CR RLG
RFQ
VIEW
RFQ
865
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 30V 108A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 89W (Tc) N-Channel 30V 108A (Tc) 4.5 mOhm @ 18A, 10V 2.5V @ 250µA 19nC @ 10V 1194pF @ 15V 4.5V, 10V ±20V