Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMN62D1SFB-7B
RFQ
VIEW
RFQ
612
In-stock
Diodes Incorporated MOSFET N-CH 60V 410MA 3DFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-UFDFN 3-DFN1006 (1.0x0.6) 470mW (Ta) N-Channel 60V 410mA (Ta) 1.4 Ohm @ 40mA, 10V 2.3V @ 250µA 2.8nC @ 10V 80pF @ 40V 4.5V, 10V ±20V
DMP32D4SFB-7B
RFQ
VIEW
RFQ
3,447
In-stock
Diodes Incorporated MOSFET P-CH 30V 400MA SOT323 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-UFDFN 3-DFN1006 (1.0x0.6) 500mW (Ta) P-Channel 30V 400mA (Ta) 2.4 Ohm @ 200mA, 10V 2.3V @ 250µA 1.3nC @ 10V 51pF @ 15V 2.5V, 10V ±20V
DMP32D4SFB-7B
RFQ
VIEW
RFQ
1,322
In-stock
Diodes Incorporated MOSFET P-CH 30V 400MA SOT323 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-UFDFN 3-DFN1006 (1.0x0.6) 500mW (Ta) P-Channel 30V 400mA (Ta) 2.4 Ohm @ 200mA, 10V 2.3V @ 250µA 1.3nC @ 10V 51pF @ 15V 2.5V, 10V ±20V
DMP58D0LFB-7
RFQ
VIEW
RFQ
1,232
In-stock
Diodes Incorporated MOSFET P-CH 50V 0.18A DFN1006-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-UFDFN 3-DFN1006 (1.0x0.6) 470mW (Ta) P-Channel 50V 180mA (Ta) 8 Ohm @ 100mA, 5V 2.1V @ 250µA - 27pF @ 25V 2.5V, 5V ±20V