Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK1003DPN-E0#T2
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Renesas Electronics America MOSFET N-CH 100V 50A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 100V 50A (Ta) 11 mOhm @ 25A, 10V 59nC @ 10V 4150pF @ 10V 10V ±20V
RJK1003DPP-E0#T2
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2,171
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Renesas Electronics America MOSFET N-CH 100V 50A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 25W (Tc) N-Channel 100V 50A (Ta) 11 mOhm @ 25A, 10V 59nC @ 10V 4150pF @ 10V 10V ±20V