- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,515
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.7A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 89W (Tc) | N-Channel | - | 900V | 5.7A (Tc) | 1 Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | 10V | ±20V | ||||
VIEW |
898
In-stock
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Infineon Technologies | MOSFET N-CH 600V 5.7A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 27W (Tc) | N-Channel | - | 600V | 5.7A (Tc) | 750 mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | 373pF @ 100V | 10V | ±20V | ||||
VIEW |
2,434
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.7A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 32W (Tc) | N-Channel | - | 900V | 5.7A (Tc) | 1 Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | 10V | ±20V |