Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB407N30NATMA1
RFQ
VIEW
RFQ
2,752
In-stock
Infineon Technologies MOSFET N-CH TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 300V 44A (Tc) 40.7 mOhm @ 44A, 10V 4V @ 270µA 87nC @ 10V 7180pF @ 100V 10V ±20V
IPB107N20N3GATMA1
RFQ
VIEW
RFQ
2,900
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 200V 88A (Tc) 10.7 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPB107N20N3GATMA1
RFQ
VIEW
RFQ
3,556
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 200V 88A (Tc) 10.7 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPB107N20N3GATMA1
RFQ
VIEW
RFQ
782
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 200V 88A (Tc) 10.7 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPB107N20NAATMA1
RFQ
VIEW
RFQ
3,979
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 200V 88A (Tc) 10.7 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPB107N20NAATMA1
RFQ
VIEW
RFQ
3,603
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 200V 88A (Tc) 10.7 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPB107N20NAATMA1
RFQ
VIEW
RFQ
2,700
In-stock
Infineon Technologies MOSFET N-CH 200V 88A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 200V 88A (Tc) 10.7 mOhm @ 88A, 10V 4V @ 270µA 87nC @ 10V 7100pF @ 100V 10V ±20V
IPB031N08N5ATMA1
RFQ
VIEW
RFQ
1,473
In-stock
Infineon Technologies MOSFET N-CH 80V TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 167W (Tc) N-Channel - 80V 120A (Tc) 3.1 mOhm @ 100A, 10V 3.8V @ 108µA 87nC @ 10V 6240pF @ 40V 6V, 10V ±20V
IPB031N08N5ATMA1
RFQ
VIEW
RFQ
3,437
In-stock
Infineon Technologies MOSFET N-CH 80V TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 167W (Tc) N-Channel - 80V 120A (Tc) 3.1 mOhm @ 100A, 10V 3.8V @ 108µA 87nC @ 10V 6240pF @ 40V 6V, 10V ±20V
IPB031N08N5ATMA1
RFQ
VIEW
RFQ
3,954
In-stock
Infineon Technologies MOSFET N-CH 80V TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 167W (Tc) N-Channel - 80V 120A (Tc) 3.1 mOhm @ 100A, 10V 3.8V @ 108µA 87nC @ 10V 6240pF @ 40V 6V, 10V ±20V