Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB60R360P7ATMA1
RFQ
VIEW
RFQ
2,448
In-stock
Infineon Technologies MOSFET TO263-3 CoolMOS™ P7 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 41W (Tc) N-Channel - 600V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V
IPB60R360P7ATMA1
RFQ
VIEW
RFQ
3,771
In-stock
Infineon Technologies MOSFET TO263-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 41W (Tc) N-Channel - 600V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V
IPB60R360P7ATMA1
RFQ
VIEW
RFQ
3,631
In-stock
Infineon Technologies MOSFET TO263-3 CoolMOS™ P7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 41W (Tc) N-Channel - 600V 9A (Tc) 360 mOhm @ 2.7A, 10V 4V @ 140µA 13nC @ 10V 555pF @ 400V 10V ±20V
IPB120N04S401ATMA1
RFQ
VIEW
RFQ
972
In-stock
Infineon Technologies MOSFET N-CH 40V 120A TO263-3-2 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 188W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 140µA 176nC @ 10V 14000pF @ 25V 10V ±20V
IPB120N04S401ATMA1
RFQ
VIEW
RFQ
2,505
In-stock
Infineon Technologies MOSFET N-CH 40V 120A TO263-3-2 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 188W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 140µA 176nC @ 10V 14000pF @ 25V 10V ±20V
IPB120N04S401ATMA1
RFQ
VIEW
RFQ
3,400
In-stock
Infineon Technologies MOSFET N-CH 40V 120A TO263-3-2 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 188W (Tc) N-Channel - 40V 120A (Tc) 1.5 mOhm @ 100A, 10V 4V @ 140µA 176nC @ 10V 14000pF @ 25V 10V ±20V