- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,756
In-stock
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Infineon Technologies | MOSFET N-CH 80V TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 80V | 80A (Tc) | 4.9 mOhm @ 80A, 10V | 3.8V @ 66µA | 53nC @ 10V | 3770pF @ 40V | 6V, 10V | ±20V | |||
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VIEW |
2,280
In-stock
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Infineon Technologies | MOSFET N-CH 75V 80A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 150W (Tc) | N-Channel | - | 75V | 80A (Tc) | 4.9 mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | 4750pF @ 37.5V | 10V | ±20V |