Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
HUFA75321S3ST
RFQ
VIEW
RFQ
3,537
In-stock
ON Semiconductor MOSFET N-CH 55V 35A D2PAK UltraFET™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 93W (Tc) N-Channel - 55V 35A (Tc) 34 mOhm @ 35A, 10V 4V @ 250µA 44nC @ 20V 680pF @ 25V 10V ±20V
HUFA75321S3S
RFQ
VIEW
RFQ
1,490
In-stock
ON Semiconductor MOSFET N-CH 55V 35A D2PAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 93W (Tc) N-Channel - 55V 35A (Tc) 34 mOhm @ 35A, 10V 4V @ 250µA 44nC @ 20V 680pF @ 25V 10V ±20V
HUF75321S3S
RFQ
VIEW
RFQ
1,011
In-stock
ON Semiconductor MOSFET N-CH 55V 35A D2PAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 93W (Tc) N-Channel - 55V 35A (Tc) 34 mOhm @ 35A, 10V 4V @ 250µA 44nC @ 20V 680pF @ 25V 10V ±20V
IPB60R330P6ATMA1
RFQ
VIEW
RFQ
3,564
In-stock
Infineon Technologies MOSFET N-CH TO263-3 CoolMOS™ P6 Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 93W (Tc) N-Channel - 600V 12A (Tc) 330 mOhm @ 4.5A, 10V 4.5V @ 370µA 22nC @ 10V 1010pF @ 100V 10V ±20V