Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXYS MOSFET N-CH 200V 60A ISOPLUS220 HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS220™ 230W (Tc) N-Channel - 200V 60A (Tc) 33 mOhm @ 30A, 10V 4V @ 4mA 155nC @ 10V 5200pF @ 25V 10V ±20V
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IXYS MOSFET N-CH 200V 35A ISOPLUS220 PolarHT™ HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ 120W (Tc) N-Channel - 200V 35A (Tc) 36 mOhm @ 37A, 10V 5V @ 4mA 107nC @ 10V 3300pF @ 25V 10V ±20V