Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STH12N120K5-2
RFQ
VIEW
RFQ
1,927
In-stock
STMicroelectronics MOSFET N-CH 1200V 12A H2PAK-2 MDmesh™ K5 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 250W (Tc) N-Channel - 1200V 12A (Tc) 690 mOhm @ 6A, 10V 5V @ 100µA 44.2nC @ 10V 1370pF @ 100V 10V ±30V
STH6N95K5-2
RFQ
VIEW
RFQ
2,770
In-stock
STMicroelectronics MOSFET N-CH 950V 6A MDmesh™ K5 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 110W (Tc) N-Channel - 950V 6A (Tc) 1.25 Ohm @ 3A, 10V 5V @ 100µA 13nC @ 10V 450pF @ 100V 10V ±30V