Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQB13N50CTM
RFQ
VIEW
RFQ
1,123
In-stock
ON Semiconductor MOSFET N-CH 500V 13A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 195W (Tc) N-Channel - 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 56nC @ 10V 2055pF @ 25V 10V ±30V
STB20NM50T4
RFQ
VIEW
RFQ
2,306
In-stock
STMicroelectronics MOSFET N-CH 550V 20A D2PAK MDmesh™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 192W (Tc) N-Channel - 550V 20A (Tc) 250 mOhm @ 10A, 10V 5V @ 250µA 56nC @ 10V 1480pF @ 25V 10V ±30V
STB7NK80ZT4
RFQ
VIEW
RFQ
3,175
In-stock
STMicroelectronics MOSFET N-CH 800V 5.2A D2PAK SuperMESH™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel - 800V 5.2A (Tc) 1.8 Ohm @ 2.6A, 10V 4.5V @ 100µA 56nC @ 10V 1138pF @ 25V 10V ±30V
IRFS23N15DTRLP
RFQ
VIEW
RFQ
1,798
In-stock
Infineon Technologies MOSFET N-CH 150V 23A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 136W (Tc) N-Channel - 150V 23A (Tc) 90 mOhm @ 14A, 10V 5.5V @ 250µA 56nC @ 10V 1200pF @ 25V 10V ±30V