Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH130N15T
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RFQ
3,038
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IXYS MOSFET N-CH 150V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 750W (Tc) N-Channel - 150V 130A (Tc) 12 mOhm @ 65A, 10V 4.5V @ 1mA 113nC @ 10V 9800pF @ 25V 10V ±30V
IXTQ130N15T
RFQ
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RFQ
2,937
In-stock
IXYS MOSFET N-CH 150V 130A TO-3P TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 750W (Tc) N-Channel - 150V 130A (Tc) 12 mOhm @ 65A, 10V 4.5V @ 1mA 113nC @ 10V 9800pF @ 25V 10V ±30V
IXTP130N10T
RFQ
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RFQ
932
In-stock
IXYS MOSFET N-CH 100V 130A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 100V 130A (Tc) 9.1 mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V 10V ±30V
IXTA130N10T
RFQ
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RFQ
2,834
In-stock
IXYS MOSFET N-CH 100V 130A TO-263 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXTA) 360W (Tc) N-Channel - 100V 130A (Tc) 9.1 mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V 10V ±30V
IRFP4668PBF
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RFQ
2,368
In-stock
Infineon Technologies MOSFET N-CH 200V 130A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 520W (Tc) N-Channel - 200V 130A (Tc) 9.7 mOhm @ 81A, 10V 5V @ 250µA 241nC @ 10V 10720pF @ 50V 10V ±30V