- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
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20 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,862
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 11.5A D2PAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 3.75W (Ta), 75W (Tc) | P-Channel | - | 100V | 11.5A (Tc) | 290 mOhm @ 5.75A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,936
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 50W (Tc) | P-Channel | - | 100V | 9.4A (Tc) | 290 mOhm @ 4.7A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,950
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | QFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 50W (Tc) | P-Channel | - | 100V | 9.4A (Tc) | 290 mOhm @ 4.7A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,853
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 8.2A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38W (Tc) | P-Channel | - | 100V | 8.2A (Tc) | 290 mOhm @ 4.1A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,193
In-stock
|
IXYS | MOSFET N-CH 650V 4A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 32W (Tc) | N-Channel | - | 650V | 4A (Tc) | 550 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,036
In-stock
|
IXYS | MOSFET N-CH 650V 8A X2 TO-252 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,523
In-stock
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STMicroelectronics | MOSFET N-CH 200V 20A PWRFLAT6X5 | MDmesh™ II | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 200V | 20A (Tc) | 105 mOhm @ 10A, 10V | 5V @ 250µA | 50nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,472
In-stock
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STMicroelectronics | MOSFET N-CH 200V 20A PWRFLAT6X5 | MDmesh™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 200V | 20A (Tc) | 105 mOhm @ 10A, 10V | 5V @ 250µA | 50nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,630
In-stock
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STMicroelectronics | MOSFET N-CH 200V 20A PWRFLAT6X5 | MDmesh™ II | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 80W (Tc) | N-Channel | - | 200V | 20A (Tc) | 105 mOhm @ 10A, 10V | 5V @ 250µA | 50nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,028
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 7.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 550V | 7.5A (Ta) | 1.07 Ohm @ 3.8A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,982
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 450V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 450V | 9A (Ta) | 770 mOhm @ 4.5A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
675
In-stock
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ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Automotive, AEC-Q101 | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 50W (Tc) | P-Channel | - | 100V | 9.4A (Tc) | 290 mOhm @ 4.7A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,077
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Automotive, AEC-Q101 | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 50W (Tc) | P-Channel | - | 100V | 9.4A (Tc) | 290 mOhm @ 4.7A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,503
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 9.4A DPAK | Automotive, AEC-Q101 | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 50W (Tc) | P-Channel | - | 100V | 9.4A (Tc) | 290 mOhm @ 4.7A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,016
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 5A (Ta) | 1.43 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,574
In-stock
|
IXYS | MOSFET N-CH 650V 8A X2 TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,957
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 8A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 500V | 8A (Ta) | 850 mOhm @ 4A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,633
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 11.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 75W (Tc) | P-Channel | - | 100V | 11.5A (Tc) | 290 mOhm @ 5.75A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,669
In-stock
|
IXYS | MOSFET N-CH 650V 8A X2 TO-263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 150W (Tc) | N-Channel | - | 650V | 8A (Tc) | 500 mOhm @ 4A, 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
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|
VIEW |
662
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
