Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
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RFQ
1,668
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Microsemi Corporation MOSFET N-CH 400V 11A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 180W (Tc) N-Channel - 400V 11A (Tc) 650 mOhm @ 5.5A, 10V 4V @ 1mA 55nC @ 10V 950pF @ 25V 10V ±30V
FQP11N50CF
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RFQ
2,735
In-stock
ON Semiconductor MOSFET N-CH 500V 11A TO-220 FRFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 195W (Tc) N-Channel - 500V 11A (Tc) 550 mOhm @ 5.5A, 10V 4V @ 250µA 55nC @ 10V 2055pF @ 25V 10V ±30V
STP6NB90
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1,673
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STMicroelectronics MOSFET N-CH 900V 5.8A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 135W (Tc) N-Channel - 900V 5.8A (Tc) 2 Ohm @ 3A, 10V 5V @ 250µA 55nC @ 10V 1400pF @ 25V 10V ±30V
FQH18N50V2
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RFQ
3,878
In-stock
ON Semiconductor MOSFET N-CH 500V 20A TO-247 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 277W (Tc) N-Channel - 500V 20A (Tc) 265 mOhm @ 10A, 10V 5V @ 250µA 55nC @ 10V 3290pF @ 25V 10V ±30V
FQA18N50V2
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RFQ
2,150
In-stock
ON Semiconductor MOSFET N-CH 500V 20A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 277W (Tc) N-Channel - 500V 20A (Tc) 265 mOhm @ 10A, 10V 5V @ 250µA 55nC @ 10V 3290pF @ 25V 10V ±30V
FQP18N50V2
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RFQ
2,248
In-stock
ON Semiconductor MOSFET N-CH 500V 18A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 208W (Tc) N-Channel - 500V 18A (Tc) 265 mOhm @ 9A, 10V 5V @ 250µA 55nC @ 10V 3290pF @ 25V 10V ±30V
APT12F60K
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RFQ
1,460
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Microsemi Corporation MOSFET N-CH 600V 12A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel - 600V 12A (Tc) 620 mOhm @ 6A, 10V 5V @ 500µA 55nC @ 10V 2200pF @ 25V 10V ±30V
FQPF18N50V2
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RFQ
3,343
In-stock
ON Semiconductor MOSFET N-CH 500V 18A TO-220F QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 69W (Tc) N-Channel - 500V 18A (Tc) 265 mOhm @ 9A, 10V 5V @ 250µA 55nC @ 10V 3290pF @ 25V 10V ±30V
STP5N120
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RFQ
1,721
In-stock
STMicroelectronics MOSFET N-CH 1200V 4.4A TO-220 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 160W (Tc) N-Channel - 1200V 4.7A (Tc) 3.5 Ohm @ 2.3A, 10V 5V @ 100µA 55nC @ 10V 120pF @ 25V 10V ±30V
R6018ANJTL
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RFQ
3,654
In-stock
Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel - 600V 18A (Ta) 270 mOhm @ 9A, 10V 4.5V @ 1mA 55nC @ 10V 2050pF @ 25V 10V ±30V
FQPF11N50CF
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RFQ
3,450
In-stock
ON Semiconductor MOSFET N-CH 500V 11A TO-220F FRFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 48W (Tc) N-Channel - 500V 11A (Tc) 550 mOhm @ 5.5A, 10V 4V @ 250µA 55nC @ 10V 2055pF @ 25V 10V ±30V
TK20N60W5,S1VF
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RFQ
2,618
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 165W (Tc) N-Channel - 600V 20A (Ta) 175 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20V60W5,LVQ
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RFQ
2,974
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20V60W5,LVQ
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RFQ
3,815
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20V60W5,LVQ
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RFQ
2,212
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel - 600V 20A (Ta) 190 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V
TK20A60W5,S5VX
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RFQ
1,148
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A TO-220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 20A (Ta) 175 mOhm @ 10A, 10V 4.5V @ 1mA 55nC @ 10V 1800pF @ 300V 10V ±30V