Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQA34N25
RFQ
VIEW
RFQ
3,190
In-stock
ON Semiconductor MOSFET N-CH 250V 34A TO-3P - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 245W (Tc) N-Channel - 250V 34A (Tc) 85 mOhm @ 17A, 10V 5V @ 250µA 80nC @ 10V 2750pF @ 25V 10V ±30V
IXTQ90N15T
RFQ
VIEW
RFQ
3,516
In-stock
IXYS MOSFET N-CH 150V 90A TO-3P - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 455W (Tc) N-Channel - 150V 90A (Tc) 20 mOhm @ 45A, 10V 4.5V @ 1mA 80nC @ 10V 4100pF @ 25V 10V ±30V
2SK2917(F)
RFQ
VIEW
RFQ
1,846
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 18A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 90W (Tc) N-Channel - 500V 18A (Ta) 270 mOhm @ 10A, 10V 4V @ 1mA 80nC @ 10V 3720pF @ 10V 10V ±30V
FQA11N90C
RFQ
VIEW
RFQ
2,239
In-stock
ON Semiconductor MOSFET N-CH 900V 11A TO-3P QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) N-Channel - 900V 11A (Tc) 1.1 Ohm @ 5.5A, 10V 5V @ 250µA 80nC @ 10V 3290pF @ 25V 10V ±30V
FQA11N90C-F109
RFQ
VIEW
RFQ
902
In-stock
ON Semiconductor MOSFET N-CH 900V 11A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) N-Channel - 900V 11A (Tc) 1.1 Ohm @ 5.5A, 10V 5V @ 250µA 80nC @ 10V 3290pF @ 25V 10V ±30V