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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,757
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 1000V 1.85A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 77W (Tc) | N-Channel | - | 1000V | 1.85A (Tc) | 8.5 Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | 625pF @ 25V | 10V | ±30V | |||
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1,814
In-stock
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Infineon Technologies | MOSFET N-CH 150V 18A DPAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 150V | 18A (Tc) | 125 mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | 900pF @ 25V | 10V | ±30V | |||
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1,381
In-stock
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Infineon Technologies | MOSFET N-CH 200V 13A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 200V | 13A (Tc) | 235 mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | 830pF @ 25V | 10V | ±30V | |||
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2,631
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.4A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 86W (Tc) | N-Channel | - | 200V | 9.4A (Tc) | 380 mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | 560pF @ 25V | 10V | ±30V | |||
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3,769
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 1000V 2.5A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 99W (Tc) | N-Channel | - | 1000V | 2.5A (Tc) | 6 Ohm @ 1.25A, 10V | 5.5V @ 250µA | 19nC @ 10V | 664pF @ 25V | 10V | ±30V | |||
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3,350
In-stock
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Infineon Technologies | MOSFET N-CH 200V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3W (Ta), 140W (Tc) | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V | |||
