- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
670
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 9A (Ta) | 830 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,503
In-stock
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Rohm Semiconductor | MOSFET N-CH 500V 9A LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 50W (Tc) | N-Channel | 500V | 9A (Ta) | 720 mOhm @ 4.5A, 10V | 4.5V @ 1mA | 21nC @ 10V | 650pF @ 25V | 10V | ±30V | |||
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VIEW |
1,982
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 9A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | 450V | 9A (Ta) | 770 mOhm @ 4.5A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,628
In-stock
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ON Semiconductor | MOSFET N-CH 1500V 9A TO3PF-3 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | - | TO-3P-3 Full Pack | TO-3PF-3 | 3W (Ta), 78W (Tc) | N-Channel | 1500V | 9A (Ta) | 3 Ohm @ 3A, 10V | 4V @ 1mA | 114nC @ 10V | 2025pF @ 30V | 10V | ±30V | |||
|
VIEW |
3,677
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,303
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 250W (Tc) | N-Channel | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
