- Series :
- Mounting Type :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
-
- 155 mOhm @ 10A, 10V (7)
- 170 mOhm @ 10A, 10V (3)
- 175 mOhm @ 10A, 10V (2)
- 180 mOhm @ 10A, 10V (1)
- 190 mOhm @ 10A, 10V (5)
- 220 mOhm @ 10A, 10V (2)
- 250 mOhm @ 10A, 10V (1)
- 270 mOhm @ 10A, 10V (1)
- 330 mOhm @ 10A, 10V (1)
- 430 mOhm @ 8A, 10V (2)
- 69 mOhm @ 10A, 10V (2)
- 85 mOhm @ 10A, 10V (2)
- 95 mOhm @ 10A, 10V (3)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
32 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,689
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 20A | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P-3L | 2.5W (Ta), 170W (Tc) | N-Channel | - | 500V | 20A (Ta) | 430 mOhm @ 8A, 10V | - | 46.6nC @ 10V | 1200pF @ 30V | 10V | ±30V | |||
|
VIEW |
2,130
In-stock
|
Renesas Electronics America | MOSFET N-CH 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 200V | 20A (Ta) | 85 mOhm @ 10A, 10V | - | 19nC @ 10V | 1250pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,722
In-stock
|
Renesas Electronics America | MOSFET N-CH 200V W-PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 200V | 20A (Ta) | 69 mOhm @ 10A, 10V | - | 38nC @ 10V | 2400pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,873
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | - | 600V | 20A (Ta) | 330 mOhm @ 10A, 10V | 4V @ 1mA | 60nC @ 10V | 4250pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,779
In-stock
|
ON Semiconductor | MOSFET N-CH 500V 20A TO-3PB | - | Obsolete | Tray | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PB | 2.5W (Ta), 170W (Tc) | N-Channel | - | 500V | 20A (Ta) | 430 mOhm @ 8A, 10V | - | 46.6nC @ 10V | 1200pF @ 30V | 10V | ±30V | |||
|
VIEW |
3,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,831
In-stock
|
Sanken | MOSFET N-CH 250V 20A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3 | 40W (Tc) | N-Channel | - | 250V | 20A (Ta) | 95 mOhm @ 10A, 10V | 4.5V @ 1mA | - | 1600pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,025
In-stock
|
Sanken | MOSFET N-CH 250V 20A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3 | 40W (Tc) | N-Channel | - | 250V | 20A (Ta) | 95 mOhm @ 10A, 10V | 4.5V @ 1mA | - | 1600pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,374
In-stock
|
Renesas Electronics America | MOSFET N-CH 500V 20A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 120W (Tc) | N-Channel | - | 500V | 20A (Ta) | 270 mOhm @ 10A, 10V | - | - | 3050pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,796
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,103
In-stock
|
Rohm Semiconductor | MOSFET N-CH 10V DRIVE LPTS | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS | 100W (Tc) | N-Channel | - | 600V | 20A (Ta) | 250 mOhm @ 10A, 10V | 4.5V @ 1mA | 65nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,320
In-stock
|
Sanken | MOSFET N-CH 250V 20A TO-220F | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 | 40W (Tc) | N-Channel | - | 250V | 20A (Ta) | 95 mOhm @ 10A, 10V | 4.5V @ 1mA | - | 1600pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,358
In-stock
|
Renesas Electronics America | MOSFET N-CH 250V 20A LDPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-83 | 4-LDPAK | 75W (Tc) | N-Channel | - | 250V | 20A (Ta) | 180 mOhm @ 10A, 10V | - | 47nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,834
In-stock
|
Renesas Electronics America | MOSFET N-CHANNEL 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Ta) | N-Channel | - | 200V | 20A (Ta) | 69 mOhm @ 10A, 10V | - | 38nC @ 10V | 2200pF @ 25V | 10V | ±30V | |||
|
VIEW |
807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,518
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 20A TO3PF | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 120W (Tc) | N-Channel | - | 600V | 20A (Ta) | 220 mOhm @ 10A, 10V | 4.15V @ 1mA | 65nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,588
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,362
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,746
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A D2PAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 165W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,869
In-stock
|
Renesas Electronics America | MOSFET N-CH 200V 20A WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Tc) | N-Channel | - | 200V | 20A (Ta) | 85 mOhm @ 10A, 10V | - | 19nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,649
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | |||
|
|
VIEW |
1,720
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 190W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | |||
|
VIEW |
1,868
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
823
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,197
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,052
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
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|
VIEW |
2,618
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,974
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,815
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,212
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
