- Series :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,651
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 1.8A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 52W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 4.6 Ohm @ 900mA, 10V | 5V @ 250µA | 8.5nC @ 10V | 353pF @ 25V | 10V | ±30V | ||||
VIEW |
1,272
In-stock
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ON Semiconductor | MOSFET N-CH 800V 1.8A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 800V | 1.8A (Tc) | 6.3 Ohm @ 900mA, 10V | 5V @ 250µA | 15nC @ 10V | 550pF @ 25V | 10V | ±30V | ||||
VIEW |
2,263
In-stock
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STMicroelectronics | MOSFET N-CH 450V 1.8A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 27W (Tc) | N-Channel | - | 450V | 1.8A (Tc) | 3.8 Ohm @ 500mA, 10V | 4.5V @ 50µA | 6nC @ 10V | 150pF @ 25V | 10V | ±30V |